Goford Semiconductor

Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in the USA, Australia, Shenzhen, Jiangsu, and Hong Kong. We have been always devoting in the R&D and sales of the power Mosfet products. We focus on the energy efficiency, mobility, and reliability to provide cost effective products to the market. We are committed to trying our best to satisfy customers’ needs, provide the most reliable and cost effective products, innovate and do better every day, partner with engineers and customers for mutual value, and work harder to realize our commitment.

Part Number	Description	View
G05NP04S	N/P 40V,4.5A/-10A,RD(MAX)<41M/37	Inquiry
G2K3N10L6	N100V, 3A,RD<220M@10V,VTH1.0V~2.	Inquiry
G110N06K	N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.	Inquiry
GT52N10D5I	N100V,65A,RD<8M@10V,VTH1.0V~2.5V	Inquiry
GC11N65K	N650V,RD(MAX)<360M@10V,VTH2.5V~4	Inquiry
G3404B	N30V,RD(MAX)<22M@10V,RD(MAX)<35M	Inquiry
G18P03S	P-30V,-15A,RD(MAX)<10M@-10V,VTH-	Inquiry
G160N04K	N40V, 25A,RD<15M@10V,VTH1.0V~2.0	Inquiry
G04P10HE	P-100V,-4A,RD(MAX)<200M@-10V,VTH	Inquiry
GT095N10S	N100V, 21A,RD<9.5M@10V,VTH1.2V~2	Inquiry
G3035L	P30V,RD(MAX)<59M@-10V,RD(MAX)<75	Inquiry
G60N10K	N90V,60A,RD<25M@10V,VTH0.8V~2.5V	Inquiry
G05N06S2	N60V, 5A,RD<35M@10V,VTH1V~2.5V,	Inquiry
G65P06D5	P60V,RD(MAX)<18M@-10V,VTH-2V~-3V	Inquiry
G07P04S	P40V,RD(MAX)<18M@-10V,RD(MAX)<22	Inquiry
G450N10D52	N100V, 35A,RD<45M@10V,VTH1.5V~2.	Inquiry
G130N06S2	MOSFET, N+N-CH,60V,9A,RD(MAX)<13	Inquiry
G28N03D3	N30V,RD(MAX)<12M@10V,RD(MAX)<18M	Inquiry
G7P03L	P30V,RD(MAX)<23M@-10V,RD(MAX)<34	Inquiry
GT080N10M	N100V, 70A,RD<7.5M@10V,VTH1V~3V,	Inquiry
G900P15T	P-150V,-60A,RD(MAX)<80M@-10V,VTH	Inquiry
GT040N04D5I	N40V,110A,RD<3.5M@10V,VTH1.0V~2.	Inquiry
GT250P10T	MOSFET P-CH 100V 56A TO-220	Inquiry
GT060N04D3	N40V,RD(MAX)<6.5M@10V,RD(MAX)<10	Inquiry
G2K3N10G	N100V, 2.5A,RD<220M@10V,VTH1V~2V	Inquiry
G230P06T	P-60V,-60A,RD(MAX)<20M@-10V,VTH-	Inquiry
G040P04T	MOSFET P-CH 40V 222A TO-220	Inquiry
G20N03D2	N30V,RD(MAX)<24M@10V,RD(MAX)<29M	Inquiry
GC11N65M	N650V,RD(MAX)<360M@10V,VTH2.5V~4	Inquiry
G20P08K	P-80V,RD(MAX)<62M@-10V,RD(MAX)<7	Inquiry
G60N04K	N40V,RD(MAX)<7M@10V,RD(MAX)<12M@	Inquiry
GT045N10M	N100V, 120A,RD<4.5M@10V,VTH2V~4V	Inquiry
GT180P08M	MOSFET, P-CH,-80V,-89A,RD(MAX)<1	Inquiry
G2305	P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7	Inquiry
GT080N10TI	N100V,65A,RD<8M@10V,VTH1.0V~2.5V	Inquiry
5P40	P40V,RD(MAX)<85M@-10V,RD(MAX)<12	Inquiry
GT035N06T	N-CH, 60V,170A, RD(MAX)<3.5M@10V	Inquiry
G15N06K	N-CH, 60V,15A,RD(MAX)<45M@10V,RD	Inquiry
G800P06LL	P-60V,-3.5A,RD(MAX)<80M@-10V,VTH	Inquiry
G02P06	P60V,RD(MAX)<190M@-10V,RD(MAX)<2	Inquiry
G120P03S2	P-30V,-16A,RD(MAX)<14M@-10V,VTH-	Inquiry
G2312	N20V,RD(MAX)<18M@10V,RD(MAX)<20M	Inquiry
G08N06S	N60V, RD(MAX)<30M@10V,RD(MAX)<40	Inquiry
G75P04SI	P-40V,-11A,RD(MAX)<8M@-10V,VTH-1	Inquiry
GT013N04D5	N40V,195A,RD<1.7M@10V,VTH2.0V~4.	Inquiry
2300F	N20V, 6A,RD<27M@4.5V,VTH0.5V~0.9	Inquiry
G080P06T	P-60V,-195A,RD(MAX)<7.5M@-10V,VT	Inquiry
G45P40T	MOSFET, P-CH, 40V,45A,TO-220	Inquiry
G80N03K	N30V, 80A,RD<6.5M@10V,VTH1.0V~2.	Inquiry
G58N06F	N60V, 35A,RD<13M@10V,VTH1.0V~2.4	Inquiry

Total 308s items

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